EC732301 datasheet(1/6 Pages) E-CMOS

Part #	EC732301

Description	P chanel MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	E-CMOS [E-CMOS Corporation]

Direct Link	http://www.ecmos.com.tw/

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1 / 6 page

EC732301

P chanel MOSFET

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 6

5E06N-Rev.F001

VDSS

-20V

RDS(on)

60mΩ (typ.)

ID

-3A ①

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high

repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in

power switching application and a wide variety of other applications.

Features and Benefits

◆ Advanced MOSFET process technology

◆ Special designed for PWM, load switching and

general purpose applications

◆ Ultra low on-resistance with low gate charge

◆ Fast switching and reverse body recovery

◆ 150℃ operating temperature

Main Product Characteristics

Package Marking and Ordering Information

Device

Device Package

Reel Size

Tape width

Quantity

EC732301B1R

SOT23

Ø 180mm

8 mm

3000 units

Absolute Maximum Ratings(TA=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

-3 ①

A

ID @ TC = 70°C

Continuous Drain Current, VGS @ 10V

-1.8 ①

IDM

Pulsed Drain Current ②

-10

PD @TC = 25°C

Power Dissipation ③

1.25

W

VDS

Drain-Source Voltage

-20

V

VGS

Gate-to-Source Voltage

± 12

V

TJ TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

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