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FDMS86182 Datasheet(PDF) 5 Page - ON Semiconductor |
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FDMS86182 Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 8 page ![]() www.fairchildsemi.com 4 ©2016 Fairchild Semiconductor Corporation FDMS86182 Rev. 1.0 Figure 7. 0 5 10 15 20 25 30 0 2 4 6 8 10 ID = 28 A VDD = 75 V VDD = 25 V Qg, GATE CHARGE (nC) VDD = 50 V Gate Charge Characteristics Figure 8. 0.1 1 10 100 1 10 100 1000 10000 f = 1 MHz VGS = 0 V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs. Drain to Source Voltage Figure9. 0.01 0.1 1 10 100 1 10 100 TJ = 100 oC TJ = 25 oC TJ = 125 oC t AV, TIME IN AVALANCHE (ms) Unclamped Inductive Switching Capability Figure 10. 25 50 75 100 125 150 0 20 40 60 80 VGS = 6 V RθJC = 1.5 o C/W VGS = 10 V T C , CASE TEMPERATURE ( o C ) Maximum Continuous Drain Current vs. Case Temperature Figure 11. 0.1 1 10 100 500 0.1 1 10 100 1000 CURVE BENT TO MEASURED DATA 10 μs 100 μs 100 ms 10 ms 1 ms VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJC = 1.5 oC/W TC = 25 oC Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 10000 20000 SINGLE PULSE RθJC = 1.5 oC/W TC = 25 oC t, PULSE WIDTH (sec) Typical Characteristics T J = 25 °C unless otherwise noted. |
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