FDMS86182 datasheet(3/8 Pages) ONSEMI

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FDMS86182 Rev. 1.0

Electrical Characteristics T

J = 25 °C unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V

100

ΔBV

DSS

ΔT

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, referenced to 25 °C

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 80 V, VGS = 0 V

μA

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

100

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 150 μA

2.0

3.2

4.0

ΔV

GS(th)

ΔT

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 150 μA, referenced to 25 °C

-9

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 28 A

5.9

7.2

VGS = 6 V, ID = 14 A

9.3

19.5

VGS = 10 V, ID = 28 A, TJ = 125 °C

9.9

12.1

gFS

Forward Transconductance

VDS = 5 V, ID = 28 A

Ciss

Input Capacitance

VDS = 50 V, VGS = 0 V,

f = 1 MHz

1880

2635

Coss

Output Capacitance

1105

1550

Crss

Reverse Transfer Capacitance

Gate Resistance

0.1

0.5

1.2

td(on)

Turn-On Delay Time

VDD = 50 V, ID = 28 A,

VGS = 10 V, RGEN = 6 Ω

Rise Time

410

td(off)

Turn-Off Delay Time

Fall Time

410

Total Gate Charge

VGS = 0 V to 10 V

VDD = 50 V,

ID = 28 A

Total Gate Charge

VGS = 0 V to 6 V

Qgs

Gate to Source Charge

8.2

Qgd

Gate to Drain “Miller” Charge

5.1

Qoss

Output Charge

VDD = 50 V, VGS = 0 V

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 2.1 A

(Note 2)

0.7

1.2

VGS = 0 V, IS = 28 A

(Note 2)

0.8

1.3

trr

Reverse Recovery Time

IF = 14 A, di/dt = 300 A/μs

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

IF = 14 A, di/dt = 1000 A/μs

Qrr

Reverse Recovery Charge

116

186

Notes:

1. RθJA is determined with the device mounted on a 1 in

2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.

2. Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0%.

3. EAS of 216 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 12 A, VDD = 100 V, VGS =10 V. 100% test at L = 0.1 mH, IAS = 38 A.

4. Pulsed Id please refer to Fig 11 SOA graph for more details.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

50 °C/W when mounted on a

1 in2 pad of 2 oz copper

125 °C/W when mounted on a

minimum pad of 2 oz copper.

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