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FDMS86183 Datasheet(PDF) 5 Page - ON Semiconductor

Part # FDMS86183
Description  N-Channel Shielded Gate PowerTrench MOSFET
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS86183 Datasheet(HTML) 5 Page - ON Semiconductor

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4
Figure 7.
0
4
8
12
16
20
0
2
4
6
8
10
ID = 16 A
VDD = 75 V
VDD = 25 V
Qg, GATE CHARGE (nC)
VDD = 50 V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1
10
100
1000
3000
f = 1 MHz
VGS = 0 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs. Drain
to Source Voltage
Figure9.
0.01
0.1
1
10
100
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
t
AV, TIME IN AVALANCHE (ms)
Unclamped Inductive
Switching Capability
Figure 10.
25
50
75
100
125
150
0
10
20
30
40
50
60
VGS = 6 V
RθJC = 2.0
o
C/W
VGS = 10 V
T
C
, CASE TEMPERATURE (
o
C
)
Maximum Continuous Drain
Current vs. Case Temperature
Figure 11.
0.1
1
10
100
500
0.1
1
10
100
300
1 ms
CURVE BENT TO
MEASURED DATA
10 μs
10 ms
100 ms
100 μs
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 2.0
oC/W
TC = 25
oC
Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
10000
SINGLE PULSE
RθJC = 2.0
oC/W
TC = 25
oC
t, PULSE WIDTH (sec)
Typical Characteristics T
J = 25 °C unless otherwise noted.



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