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FDMS86183 Datasheet(PDF) 4 Page - ON Semiconductor

Part # FDMS86183
Description  N-Channel Shielded Gate PowerTrench MOSFET
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS86183 Datasheet(HTML) 4 Page - ON Semiconductor

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3
Typical Characteristics T
J = 25 °C unless otherwise noted.
Figure 1.
01
23
45
0
20
40
60
80
100
120
V
GS = 6.5 V
V
GS = 6 V
V
GS = 8 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
GS = 5.5 V
VGS = 10 V
V
DS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
0
2040
6080
100
120
0
1
2
3
4
5
V
GS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
V
GS = 6.5 V
VGS = 8 V
V
GS = 5.5 V
V
GS = 10 V
Normalized On-Resistance
vs. Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
-75
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 16 A
VGS = 10 V
TJ, JUNCTION TEMPERATURE (
oC)
vs. Junction Temperature
Figure 4.
45
678
9
10
0
10
20
30
40
50
60
TJ = 125 oC
ID = 16 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs. Gate to
Source Voltage
Figure 5. Transfer Characteristics
2
34567
89
10
0
20
40
60
80
100
120
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.00.20.40.6
0.8
1.01.2
0.001
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs. Source Current



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