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TPC6002 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TPC6002
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
PDF  6 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6002 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TPC6002
2001-11-07
4
Ambient temperature Ta (
°C)
RDS (ON) – Ta
Drain-source voltage VDS (V)
IDR – VDS
Drain-source voltage VDS (V)
Capacitance – VDS
Ambient temperature Ta (°C)
Vth – Ta
Ambient temperature Ta (°C)
PD – Tc
Total gate charge Qg (nC)
Dynamic input/output characteristics
0
10
20
30
40
60
-80
-40
0
40
80
160
Common source
Pulse test
50
120
ID = 6 A, 3 A, 1.5 A
VGS = 4.5 V
VGS = 10 V
ID = 6 A, 3 A, 1.5 A
0.1
1
30
-0.4
-0.6
-0.8
-1
-1.2
-0.2
3
0.3
100
Common source
Ta
= 25°C
Pulse test
10
VGS = 0 V
1 V
3 V
5 V
10 V
0
3
10
100
0.3
1
30
10
100
1000
0.1
30
300
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25°C
Crss
Coss
Ciss
0
1
1.5
2
2.5
3
-80
-40
0
40
80
160
Common source
VDS = 10 V
ID = 1 mA
Pulse test
120
0.5
0
0
0.5
1
1.5
2
2.5
40
80
120
160
(1) t
= 5 s
(2) t
= 5 s
(1) DC
(2) DC
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
0
0
5
4
12
16
20
10
25
35
0
4
8
10
16
Common source
ID = 6 A
Ta
= 25°C
Pulse test
12 V
VGS
VDD = 24 V
15
20
30
40
824
14
12
6
2
VDD = 24 V
6 V
6 V
12 V
VDS



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