SC8100S datasheet(2/8 Pages) SAMHOP

2 / 8 page

m ohm

5.7

Symbol

Min

Typ

Max

Units

BVSSS

IGSS

±1

VGS(th)

0.5

VGS=4.5V , IS=4A

RSS(ON)

Source-Source On-State Resistance

ISSS

Gate Threshold Voltage

VSS=VGS , IS=1mA

VSS=12V , VGS=0V

VGS= ±5V , VSS=0V

Zero Gate Voltage Source Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Source-Source Breakdown Voltage

VGS=0V , IS=250uA

ON CHARACTERISTICS

SC8100S

0.8

1.3

gFS

296

1080

3267

2555

tD(ON)

18.4

tD(OFF)

SWITCHING CHARACTERISTICS

VDD=12V

IS=4A

VGS=4.0V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VSS=5V , IS=4A

Forward Transconductance

VDD=12V,IS=4A,

VG1S1=4.0V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VFSS

Diode Forward Voltage

VGS=0V,IS=2A

0.77

1.2

www.samhop.com.tw

Mar,16,2017

m ohm

VGS=4.0V , IS=4A

5.9

m ohm

VGS=3.8V , IS=4A

6.3

m ohm

VGS=3.1V , IS=4A

7.8

4.6

4.8

4.9

5.7

VGS=2.5V , IS=4A

11.0

7.1

m ohm

Ver 2.0

3.6

3.7

3.8

4.2

4.8

Notes

a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

b.Guaranteed by design, not subject to production testing.

c.Drain current limited by maximum junction temperature.

SC8100S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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