PTVA084007NF Datasheet(PDF) - Cree, Inc

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PTVA084007NF Datasheet (PDF) - Cree, Inc

PTVA084007NF Datasheet PDF - Cree, Inc


Part #	PTVA084007NF

Download	PTVA084007NF Download

File Size	486.03 Kbytes

Page	9 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Description

Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz

PTVA084007NF Datasheet (PDF)

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PTVA084007NF Datasheet PDF - Cree, Inc


Part #	PTVA084007NF

Download	PTVA084007NF Click to download

File Size	486.03 Kbytes

Page	9 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Description	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz

PTVA084007NF Datasheet (HTML) - Cree, Inc

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Similar Part No. - PTVA084007NF

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTVA084007NF	491Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz Rev. 03, 2017-08-30
WOLFSPEED, INC.	PTVA084007NF	497Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz Rev. 04.2, 2022-02-13
WOLFSPEED, INC.	PTVA084007NF-V1-R5	497Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz Rev. 04.2, 2022-02-13

Similar Description - PTVA084007NF

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTVA084007NF	491Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz Rev. 03, 2017-08-30
	PTRA083818NF	481Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz Rev. 05.1, 2017-03-30
	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16
Cree, Inc	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
	PTRA083818NF	606Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz
	PTRA084808NF	649Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz
	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz
WOLFSPEED, INC.	PTRA083818NF	708Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz Rev. 06.2, 2022-1-27
	PTRA087008NB	731Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz Rev. 03.4, 2022-02-13
	PTVA084007NF	497Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz Rev. 04.2, 2022-02-13

About Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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