Product Description
Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

Product Features
• On-chip Active Bias Control
• Power Control Allows Power Consumption
   Reduction
• Patented High Reliability GaAsHBT Technology
• High Linearity Performance: +48dBm OIP3 Typ.
• Surface-Mountable Plastic Package

Applications
• W-CDMA Systems
• Multi-Carrier Applications