Product Description
Stanford Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.

Product Features
• High Linearity Performance:
   +47 dBm Typ. OIP3 at 2140 MHz
   +21.7 dBm W-CDMA Channel Power at -45 dBc ACP
• On-chip Active Bias Control
• High Gain: 23 dB Typ.
• Patented High Reliability GaAsHBT Technology
• Surface-Mountable Plastic Package

Applications
• W-CDMA Systems
• Multi-Carrier Applications