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STB78NF55-08 Datasheet (PDF) - STMicroelectronics
STB78NF55-08 Datasheet PDF - STMicroelectronics
Part # STB78NF55-08
Download  STB78NF55-08 Download
File Size   819.36 Kbytes
Page   19 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 55 V, 0.0065 Ω typ., 78 A STripFET™ II Power MOSFETs in D²PAK and TO-220 packages

STB78NF55-08 Datasheet (PDF)

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STB78NF55-08 Datasheet PDF - STMicroelectronics

Part # STB78NF55-08
Download  STB78NF55-08 Click to download

File Size   819.36 Kbytes
Page   19 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 55 V, 0.0065 Ω typ., 78 A STripFET™ II Power MOSFETs in D²PAK and TO-220 packages

STB78NF55-08 Datasheet (HTML) - STMicroelectronics


STB78NF55-08 Product details

Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance

Applications
• Switching applications

Description
These Power MOSFETs have been developed
using STMicroelectronics’ unique STripFET
process, which is specifically designed to
minimize input capacitance and gate charge. This
renders the devices suitable for use as primary
switch in advanced high-efficiency isolated DCDC
converters for telecom and computer
applications, and applications with low gate
charge driving requirements.




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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