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STB78NF55-08 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STB78NF55-08
Description  N-channel 55 V, 0.0065 Ω typ., 78 A STripFET™ II Power MOSFETs in D²PAK and TO-220 packages
PDF  19 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB78NF55-08 Datasheet(HTML) 5 Page - STMicroelectronics

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STB78NF55-08, STP78NF55-08
Electrical characteristics
19
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min
Typ. Max.
Unit
ISD
Source-drain current
-
80
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
320
A
VSD
Forward on voltage
ISD = 80 A, VGS = 0 V
-
1.5
V
trr
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Reverse recovery time
ISD = 80 A, VDD = 25 V,
di/dt = 100 A/µs
Tj = 150 °C
(Figure 15: Test circuit for
inductive load switching
and diode recovery times)
-80
ns
Qrr
Reverse recovery charge
-
230
nC
IRRM
Reverse recovery current
-
5.7
A



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