STB78NF55-08 datasheet(4/19 Pages) STMICROELECTRONICS

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Electrical characteristics

STB78NF55-08, STP78NF55-08

4/19

DocID029564 Rev 1

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0 V, ID = 250 μA55

IDSS

Zero gate voltage

drain current

VGS = 0 V, VDS = 55 V

µA

VGS = 0 V, VDS = 55 V,

@125 °C (1)

Defined by design, not subject to production test

µA

IGSS

Gate-body leakage

current

VDS = 0 V

VGS = ± 20 V

± 100

VGS(th)

Gate threshold voltage

VDS = VGS , ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 40 A

0.0065 0.008

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

gfs

(1)

Pulsed: pulse duration=300 μs, duty cycle 1.5%

Forward transconductance

VDS= 15 V, ID = 18 A

Ciss

Input capacitance

VGS = 0 V, VDS = 25 V,

f = 1 MHz

3740

Coss

Output capacitance

830

Crss

Reverse transfer

capacitance

-265

Total gate charge

VDD = 27 V, ID = 80 A,

VGS = 10 V,

(Figure 14: Gate charge test

circuit)

112

155

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

VDD = 27 V, ID = 40 A

RG =4.7 Ω, VGS = 10 V

(Figure 13: Switching times

test circuit for resistive load

and Figure 18: Switching

time waveform.)

-20

Rise time

110

td(off)

Turn-off delay time

Fall time

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