Description
The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit
synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS sixtransistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input
registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K.
These products are suitable for applications which require synchronous operation, high speed, low voltage,
high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.
Features
Power Supply
• 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
Clock
• Fast clock cycle time for high bandwidth
• Two input clocks (K and /K) for precise DDR timing at clock rising edges only
• Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches
• Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
• Clock-stop capability with s restart
I/O
• Separate independent read and write data ports with concurrent transactions
• 100% bus utilization DDR read and write operation
• HSTL I/O
• User programmable output impedance
• DLL/PLL circuitry for wide output data valid window and future frequency scaling
Function
• Four-tick burst for reduced address frequency
• Internally self-timed write control
• Simple control logic for easy depth expansion
• JTAG 1149.1 compatible test access port
Package
• 165 FBGA package (13 x 15 x 1.4 mm)
• RoHS Compliance Level = 6/6