Description
The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous
quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory
cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled
by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable
for applications which require synchronous operation, high speed, low voltage, high density and wide bit
configuration. These products are packaged in 165-pin plastic FBGA package.
# = A: Read Latency =2.5, w/o ODT # = G: Read Latency =2.0, w/o ODT
# = D: Read Latency =2.5, w/ ODT # = K: Read Latency =2.0, w/ ODT
hinT=00000.1100.1100.0000.0000---
00000.0000.0000.0000.0000---
00000.0000.0000.0000.0000---QDRII+_RL25
Features
႑ Power Supply
• 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
႑ Clock
• Fast clock cycle time for high bandwidth
• Two input clocks (K and /K) for precise DDR timing at clock rising edges only
• Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
• Clock-stop capability with μs restart
႑ I/O
• Separate independent read and write data ports with concurrent transactions
• 100% bus utilization DDR read and write operation
• HSTL I/O
• User programmable output impedance
• DLL/PLL circuitry for wide output data valid window and future frequency scaling
• Data valid pin (QVLD) to indicate valid data on the output
႑ Function
• Four-tick burst for reduced address frequency
• Internally self-timed write control
• Simple control logic for easy depth expansion
• JTAG 1149.1 compatible test access port
႑ Package
• 165 FBGA package (15 x 17 x 1.4 mm)