Description

The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Features

■ Very low collector to emitter saturation voltage

■ DC current gain, hFE >100

■ 3 A continuous collector current

■ 40 V breakdown voltage V(BR)CER

■ SOT-223 plastic package for surface mounting circuits in tape and reel packing

Applications

■ Power management in portable equipment

■ Voltage regulation in bias supply circuits

■ Switching regulator in battery charger applications

■ Heavy load driver