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LPS Marking, LP6253HSPF Datasheet(PDF) 7 Page - Lowpower Semiconductor inc

Part # LP6253HSPF
Description  High Efficiency 8A Synchronous Boost Convertor
PDF  12 Pages
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Manufacturer  POWER [Lowpower Semiconductor inc]
Direct Link  http://www.lowpowersemi.com
Logo POWER - Lowpower Semiconductor inc

LP6253HSPF Datasheet(HTML) 7 Page - Lowpower Semiconductor inc

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LP6253H
Aug.-2017
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 7 of 12
Preliminary Datasheet
LP6253H
Operation Information
The LP6253H uses a synchronous 650KHz fixed
frequency, current-mode regulation architecture to
regulate the output voltage. The LP6253H measures
the output voltage through an external resistive
voltage divider and compares that to the internal
1.21V reference to generate the error voltage to the
inductor current to regulate the output voltage. The
use of current-mode regulation improves transient
response and control loop stability. The peak current
of the NMOS switch is also sensed to limit the
maximum current flowing through the switch and the
inductor. The typical peak current limit is set to 8A.
An internal temperature sensor prevents the device
from getting overheated in case of excessive power
dissipation.
The device integrates a high side N-channel and a
low side N-channel MOSFET transistor to realize a
synchronous rectifier. Because the commonly used
discrete Schottky rectifier is replaced with a low
RDS(ON) NMOS switch, the power conversion
efficiency reaches 96%. To avoid ground shift due to
the high currents in the NMOS switch, two separate
ground pins are used. The reference for all control
functions is the GND pin. The source of the NMOS
switch is connected to GND. A special circuit is
applied to disconnect the load from the input during
shutdown of the converter. In conventional
synchronous rectifier circuits, the back gate diode of
the high-side NMOS is forward biased in shutdown
and allows current flowing from the VIN to the VOUT.
This device however uses a special circuit which
takes the cathode of the back gate diode of the
high-side NMOS and disconnects it from the source
when the regulator is not enabled (EN=low).
The benefit of this feature for the system design
engineer is that the battery is not depleted during
shutdown
of
the
converter.
No
additional
components have to be added to the design to make
sure that the battery is disconnected from the output
of the converter.
Device Enable
The device is put into operation when EN is set high.
It is put into a shutdown mode when EN is set to
GND. In shutdown mode, the regulator stops
switching, all internal control circuitry including the
low-battery comparator is switched off, and the load
is isolated from the input (as described in the
Synchronous Rectifier Section). This also means that
the output voltage can drop below the input voltage
during shutdown. During start-up of the converter,
the duty cycle and the peak current are limited in
order to avoid high peak currents drawn from the
battery.
Undervoltage Lockout
An under voltage lockout function prevents device
start-up if the supply voltage on VIN is lower than
approximately 2V. When in operation and the battery
is being discharged, the device automatically enters
the shutdown mode if the voltage on VIN drops
below approximately 1.8V. This undervoltage lockout
function is implemented in order to prevent the
malfunctioning of the converter.



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