C6D08065 Marking, C6D08065A datasheet(1/6 Pages) CREE

Part #	C6D08065A

Description	Silicon Carbide Schottky Diode

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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C6D08065A, Rev. -, 04-2019

C6D08065A

Silicon Carbide Schottky Diode

Z-Rec® Rectifier

Features

• New 6th Generation Technology

• Low Forward Voltage Drop (V

F)

• Zero Reverse Recovery Current

• Zero Forward Recovery Voltage

• Low Leakage Current (I

r)

• Temperature-Independent Switching Behavior

• Positive Temperature Coefficient on V

F

Benefits

• Higher System Level Efficiency

• Increase System Power Density

• Reduction of Heat Sink Requirements

• Parallel Devices Without Thermal Runaway

Applications

• Switch Mode Power Supplies (SMPS)

• Server/Telecom Power Supplies

• Industrial Power Supplies

• Solar

• UPS

Package

TO-220-2

Part Number

Package

Marking

C6D08065A

TO-220-2

C6D08065

PIN 1

PIN 2

CASE

V

RRM

=

650 V

I

F (TC=155˚C) =

8 A

Q

c

=

29 nC

Maximum Ratings (T

C = 25 ˚C unless otherwise specified)

Symbol

Parameter

Value

Unit

Test Conditions

Note

V

RRM

Repetitive Peak Reverse Voltage

650

V

DC

DC Blocking Voltage

650

V

I

F

Continuous Forward Current

30

16

8

A

T

C=25˚C

T

C=125˚C

T

C=155˚C

Fig. 3

I

FRM

Repetitive Peak Forward Surge Current

37

22

A

T

C=25˚C, tP = 10 ms, Half Sine Wave

T

C=110˚C, tP=10 ms, Half Sine Wave

I

FSM

Non-Repetitive Peak Forward Surge Current

69

63

A

T

C=25˚C, tp = 10 ms, Half Sine Wave

T

C=110˚C, tp = 10 ms, Half Sine Wave

Fig. 8

I

F,Max

Non-Repetitive Peak Forward Surge Current

860

790

A

T

C=25˚C, tP = 10 µs, Pulse

T

C=110˚C, tP = 10 µs, Pulse

Fig. 8

P

tot

Power Dissipation

92.6

40.1

W

T

C=25˚C

T

C=110˚C

Fig. 4

T

J , Tstg

Operating Junction and Storage Temperature

-55 to

+175

˚C

TO-220 Mounting Torque

1

8.8

Nm

lbf-in

M3 Screw

6-32 Screw

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