702 Marking, 2N7002 datasheet(4/10 Pages) NSC

4 / 10 page

NDF7000A

Electrical Characteristics TC e 25 C unless otherwise noted

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS e 0V ID e 10 mA60

IDSS

Zero Gate Voltage Drain Current

VDS e 48V VGS e 0V

TC e 125 C1

IGSSF

Gate-Body Leakage Forward

VGS eb15V

ON CHARACTERISTICS

VGS(th)

Gate Threshold Voltage

VDS e VGS ID e 1 mA

rDS(ON)

Static Drain-Source

VGS e 10V ID e 05A

On-Resistance

TC e 125 C

VDS(ON)

Drain-Source On-Voltage

VGS e 10V ID e 500 mA

VGS e 45V ID e 75 mA

014

0225

ID(ON)

On-State Drain Current

VGS e 45V VDS t 2VDS(ON)

400

600

gFS

Forward Transconductance

VDS t 2VDS(ON) ID e 200 mA

100

320

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VDS e 25V VGS e 0V f e 10 MHz

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

ton

Turn-On Time

VDD e 15V ID e 500 mA VGS e 10V

toff

Turn-Off Time

RG e 25X RL e 25X

BODY-DRAIN DIODE RATINGS

Maximum Continuous Drain-Source Diode Forward Current

400

ISM

Maximum Pulsed Drain-Source Diode Forward Current

2000

VSD

Drain-Source Diode Forward Voltage

VGS e 0V IS e 400 mA

088

THERMAL CHARACTERISTICS

RiJA

Thermal Resistance Junction to Ambient

200

Pulse Test Pulse Width s 300 ms Duty Cycle s 20%

702 Marking, 2N7002 Datasheet(PDF) 4 Page - National Semiconductor (TI)

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