702 Marking, 2N7002 datasheet(1/10 Pages) NSC

Part #	2N7002

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	NSC [National Semiconductor (TI)]

Direct Link	http://www.national.com

Logo

1 / 10 page

TLG11378

March 1993

2N70002N7002NDF7000ANDS7002A

N-Channel Enhancement Mode Field Effect Transistor

General Description

These n-channel enhancement mode field effect transistors

are produced using National’s very high cell density third

generation DMOS technology These products have been

designed to minimize on-state resistance provide rugged

and reliable performance and fast switching They can be

used with a minimum of effort in most applications requir-

ing up to 400 mA DC and can deliver pulsed currents up to

2A This product is particularly suited to low voltage low

current applications such as small servo motor controls

power MOSFET gate drivers and other switching applica-

tions

Features

Y

Efficient high density cell design approaching

(3 millionin2)

Y

Voltage controlled small signal switch

Y

Rugged

Y

High saturation current

Y

Low RDS (ON)

TLG11378 – 1

TO-92

7000 Series

TLG11378 – 2

TO-236 AB

(SOT-23)

7002 Series

TLG11378 – 3

Absolute Maximum Ratings

Symbol

Parameter

2N7000

2N7002

NDF7000A

NDS7002A

Units

VDSS

Drain-Source Voltage

60

V

VDGR

Drain-Gate Voltage (RGS s 1MX)60

V

VGSS

Gate-Source Voltage

g

40

V

ID

Drain CurrentContinuous

200

115

400

280

mA

Pulsed

500

800

2000

1500

mA

PD

Total Power Dissipation

TA e 25 C

400

200

625

300

mW

Derating above 25 C

32

16

5

24

mW C

TJ TSTG

Operating and Storage Temperature Range

b

55 to 150

b

65 to 150

C

TL

Maximum Lead Temperature for Soldering

300

C

Purposes

from Case for 10 Seconds

C1995 National Semiconductor Corporation

RRD-B30M115Printed in U S A

Similar Description - 2N7002

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PHD83N03LT	282Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
	PHP112N06T	262Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-07 March 2001
	PHP47NQ10T	267Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-16 May 2001
	PHP78NQ03LT	292Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-14 November 2001
	SI4410DY	266Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 02-05 July 2001
	SI4416DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-05 June 2001
	SI4420DY	254Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-28 May 2001
	SI9956DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
Fairchild Semiconductor	FDC633N	278Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
Fairchild Semiconductor	FDT459N	89Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

More results

702 Marking, 2N7002 Datasheet(PDF) 1 Page - National Semiconductor (TI)

2N7002 Datasheet(HTML) 1 Page - National Semiconductor (TI)

Similar Description - 2N7002

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL