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ST25DV04K Datasheet(PDF) 91 Page - STMicroelectronics |
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ST25DV04K Datasheet(HTML) 91 Page - STMicroelectronics |
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91 / 220 page ![]() DocID027603 Rev 4 91/220 ST25DV04K ST25DV16K ST25DV64K I2C operation 219 Byte write is inhibited if byte complies with conditions described in Section 6.4.1: I2C Byte write, in addition: • Byte is in user memory but does not belong to same area than previous received byte (area border crossing is forbidden). • 256 write occurrence have already been reached in the same sequential write. EEPROM memory (user memory and system configuration) is internally organized in pages of 4 bytes long. Data located in a same page all share the same most significant memory address bits b16-b2. I2C sequential write programming time in the EEPROM memory is dependent on this internal organization: total programming time is the I2C write time tW (as defined in Table 209: I2C AC characteristics up to 85°C and Table 210: I2C AC characteristics up to 125°C) multiplied by the number of internal EEPROM pages where the data must be programmed, including incomplete pages. For example, a 256 Bytes I2C sequential write, starting at address 0002h will write data over 65 pages. Total write time in this case is tW x 65. Figure 26. Write mode sequences when write is not inhibited Note: N ≤ 256 |
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