000-000C55545-101

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SLGC55545

1. For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report,

SPRA953.

2. The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K

board, as specified in JESD51-7, in an environment described in JESD51-2a.

3. The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific

JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

4. The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control

the PCB temperature, as described in JESD51-8.

5. The junction-to-top characterization parameter,

extracted from the simulation data for obtaining

6. The junction-to-board characterization parameter,

extracted from the simulation data for obtaining

7. The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No

specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

Parameter

Typical

Unit

53.4

°C/W

51.4

°C/W

17.2

°C/W

3.7

°C/W

20.7

°C/W

3.9

°C/W

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

Symbol

Parameter

Condition/Note

Min.

Typ.

Max.

Unit

Input Voltage

VIN

4.5

--

5.5

V

Logic Level Inputs (CTL1, CTL2,

CTL3, EN, ILIM_SEL)

0

--

5.5

V

Data Line Inputs (DP_IN,

DM_IN, DP_OUT, DM_OUT)

--

--

5.5

V

Continuous Current

Data Line inputs (SDP or CDP

mode, DP_IN to DP_OUT or

DM_IN to DM_OUT)

--

--

±30

mA

Data Line inputs (BC1.2 DCP

mode, DP_IN to DM_IN)

--

--

±15

mA

Current-limit set resistors

ILIM_L to GND, ILIM_H to GND

16.9

--

750

k

Ω

Operating virtual junction

temperature

-40

--

125

°C

Input Logic High

1.8

--

--

V

Input Logic Low

--

--

0.8

V

Input Logic Hysteresis

--

250

--

mV