HT66F005 datasheet(10/109 Pages) HOLTEK

10 / 109 page

Rev. 1.30

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Rev. 1.30

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HT66F005/HT66F006

Cost-Effective A/D Flash MCU with EEPROM

HT66F005/HT66F006

Cost-Effective A/D Flash MCU with EEPROM

Absolute Maximum Ratings

SupplyVoltage................................................................................................VSS−0.3VtoVSS+6.0V

InputVoltage..................................................................................................VSS−0.3VtoVDD+0.3V

StorageTemperature....................................................................................................-50˚Cto125˚C

OperatingTemperature..................................................................................................-40˚Cto85˚C

IOHTotal..................................................................................................................................-100mA

IOLTotal................................................................................................................................... 100mA

TotalPowerDissipation........................................................................................................ 500mW

Note:Thesearestressratingsonly.Stressesexceedingtherangespecifiedunder"AbsoluteMaximum

Ratings"maycausesubstantialdamagetothesedevices.Functionaloperationofthesedevicesat

otherconditionsbeyondthoselistedinthespecificationisnotimpliedandprolongedexposureto

extremeconditionsmayaffectdevicesreliability.

D.C. Characteristics

Ta=25˚C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VDD

Conditions

VDD

O�e�ating Vo�tage

(HXT)

—

fSYS=8MHz

�.�

—

5.5

fSYS=1�MHz

�.�

—

5.5

fSYS=16MHz

3.3

—

5.5

fSYS=�0MHz

4.5

—

5.5

O�e�ating Vo�tage

(HIRC)

—

fSYS=8MHz

�.�

—

5.5

fSYS=1�MHz

�.�

—

5.5

fSYS=16MHz

3.3

—

5.5

IDD1

O�e�ating Cu��ent�

No�ma� Mode� fSYS=fH

(HXT)

3V No �oad� fH=4MHz� �DC off�

WDT enab�e

—

0.6

0.9

m�

—

1.8

�.�

m�

3V No �oad� fH=8MHz� �DC off�

WDT enab�e

—

1.1

1.�

m�

—

�.9

4.4

m�

3V No �oad� fH=1�MHz� �DC off�

WDT enab�e

—

1.6

�.5

m�

—

4.1

6.�

m�

3.3V No �oad� fH=16MHz� �DC off�

WDT enab�e

—

�.0

3.0

m�

—

5.�

�.8

m�

5V No �oad� f

=�0MHz� �DC off�

WDT enab�e

—

6.4

9.6

m�

IDD�

O�e�ating Cu��ent�

No�ma� Mode� fSYS=fH

(HIRC)

3V No �oad� fH=4MHz� �DC off�

WDT enab�e

—

0.6

0.9

m�

—

1.8

�.�

m�

3V No �oad� fH=8MHz� �DC off�

WDT enab�e

—

1.1

1.�

m�

—

�.9

4.4

m�

3V No �oad� fH=1�MHz� �DC off�

WDT enab�e

—

1.6

�.5

m�

—

4.1

6.�

m�

IDD3

O�e�ating Cu��ent� S�ow Mode�

fSYS=fL=LIRC

3V No �oad� fSYS=LIRC� �DC off�

WDT enab�e� LVR disab�e

—

�0

μA

—

μA

IDD3�

O�e�ating Cu��ent� S�ow Mode�

fSYS=fL=LIRC

3V No �oad� fSYS=LIRC� �DC off�

WDT enab�e � LVR enab�e

—

μA

—

135

μA

HT66F005 Datasheet(PDF) 10 Page - Holtek Semiconductor Inc

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