MB91F467BA datasheet(110/127 Pages) CYPRESS

110 / 127 page

MB91460B Series

Document Number: 002-04608 Rev. *A

Page 109 of 126

15.6

Flash Memory Program/Erase Characteristics

15.6.1 MB91F467BA/466BA

(VDD5  3.0 V to 5.5 V, VDD5R  3.0 V to 5.5 V, VSS5  0 V, TA  40 C to  105 C)

1. This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high temperature

measurements into normalized value at 85oC)

15.6.2 MB91F465BB/464BB

(VDD5  3.0 V to 5.5 V, VDD5R  3.0 V to 5.5 V, VSS5  0 V, TA  40 C to  105 C)

1. This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high temperature mea-

surements into normalized value at 85oC)

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

0.5

2.0

Erasure programming time not included

Chip erase time

n*0.5

n*2.0

n is the number of Flash sector of the device

Word (16-bit width) program-

ming time

100

s

System overhead time not included

Program/Erase cycle

10 000

cycle

Flash data retention time

year

[1]

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

0.9

3.6

Erasure programming time not included

Chip erase time

n*0.9

n*3.6

n is the number of Flash sector of the device

Word (16-bit or 32-bit width)

programming time

370

s

System overhead time not included

Program/Erase cycle

10 000

cycle

Flash data retention time

year

[1]

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