CY7C1069G datasheet(7/20 Pages) CYPRESS

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Document Number: 001-81539 Rev. *J

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CY7C1069G

CY7C1069GE

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage temperature ................................ –65

C to +150 C

Ambient temperature

with power applied ................................... –55

C to +125 C

Supply voltage

on VCC relative to GND ...............................–0.5 V to +6.0 V

DC voltage applied to outputs

in High Z State [7] ................................ –0.5 V to VCC + 0.5 V

DC input voltage [7] ............................. –0.5 V to VCC + 0.5 V

Current into outputs (LOW) ........................................ 20 mA

Static Discharge Voltage

(MIL-STD-883, Method 3015) ................................. > 2001 V

Latch up current ..................................................... > 140 mA

Operating Range

Grade

Ambient Temperature

VCC

Industrial

–40

C to +85 C

1.65 V to 2.2 V,

2.2 V to 3.6 V,

4.5 V to 5.5 V

DC Electrical Characteristics

Over the Operating Range of –40

C to 85 C

Parameter

Description

Test Conditions

10 ns / 15 ns

Unit

Min

Typ [8]

Max

VOH

Output HIGH

voltage

1.65 V to 2.2 V VCC = Min, IOH = –0.1 mA

1.4

–

2.2 V to 2.7 V

VCC = Min, IOH = –1.0 mA

2.0

–

2.7 V to 3.0 V

VCC = Min, IOH = –4.0 mA

2.2

–

3.0 V to 3.6 V

VCC = Min, IOH = –4.0 mA

2.4

–

4.5 V to 5.5 V

VCC = Min, IOH = –4.0 mA

2.4

–

4.5 V to 5.5 V

VCC = Min, IOH = –0.1 mA

VCC – 0.4 [9]

––

VOL

Output LOW

voltage

1.65 V to 2.2 V VCC = Min, IOL = 0.1 mA

–

0.2

2.2 V to 2.7 V

VCC = Min, IOL = 2 mA

–

0.4

2.7 V to 3.6 V

VCC = Min, IOL = 8 mA

–

0.4

4.5 V to 5.5 V

VCC = Min, IOL = 8 mA

–

0.4

VIH

Input HIGH

voltage

1.65 V to 2.2 V –

1.4

–

VCC + 0.2

2.2 V to 2.7 V

–

2.0

–

VCC + 0.3

2.7 V to 3.6 V

–

2.0

–

VCC + 0.3

4.5 V to 5.5 V

–

2.0

–

VCC + 0.5

VIL

Input LOW

voltage [7]

1.65 V to 2.2 V –

–0.2

–

0.4

2.2 V to 2.7 V

–

–0.3

–

0.6

2.7 V to 3.6 V

–

–0.3

–

0.8

4.5 V to 5.5 V

–

–0.5

–

0.8

IIX

Input leakage current

GND < VIN < VCC

–1.0

–

+1.0

A

IOZ

Output leakage current

GND < VOUT < VCC, Output disabled

–1.0

–

+1.0

A

ICC

Operating supply current

VCC = Max, IOUT = 0 mA,

CMOS levels

f = 100 MHz

–

90.0

110.0

f = 66.7 MHz

–

70.0

80.0

ISB1

Automatic CE power down

current – TTL inputs

Max VCC, CE > VIH [10],

VIN > VIH or VIN < VIL, f = fMAX

–

40.0

ISB2

Automatic CE power down

current – CMOS inputs

Max VCC, CE > VCC – 0.2 V [10],

VIN > VCC – 0.2 V or VIN < 0.2 V, f = 0

–

20.0 [8]

30.0

Notes

7. VIL(min) = –2.0 V and VIH(max) = VCC + 2 V for pulse durations of less than 20 ns.

8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = 1.8 V (for VCC range of 1.65 V–2.2 V), VCC =3V

(for VCC range of 2.2 V–3.6 V), and VCC = 5 V (for VCC range of 4.5 V–5.5 V), TA = 25 °C.

9. This parameter is guaranteed by design and is not tested.

10. For all dual chip enable devices, CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW,

CE is HIGH.

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