MCP73828 datasheet(3/24 Pages) MICROCHIP

3 / 24 page

 2002 Microchip Technology Inc.

DS21706A-page 3

MCP73828

1.0

ELECTRICAL

CHARACTERISTICS

1.1

Maximum Ratings*

VIN...................................................................... -0.3V to 6.0V

All inputs and outputs w.r.t. GND ................-0.3 to (VIN+0.3)V

Current at CD10 Pin ................................................ +/-30 mA

Current at VDRV.......................................................... +/-1 mA

Maximum Junction Temperature, T

J.............................. 150°C

Storage temperature .....................................-65°C to +150°C

ESD protection on all pins

..................................................≥ 4kV

*Notice: Stresses above those listed under “Maximum Rat-

ings” may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied. Expo-

sure to maximum rating conditions for extended periods may

affect device reliability.

PIN FUNCTION TABLE

DC CHARACTERISTICS: MCP73828-4.1, MCP73828-4.2

Name

Description

SHDN

Logic Shutdown

GND

Battery Management

0V Reference

THERM

Cell Temperature Monitor

CD10

Charge Complete Output

5VBAT

Cell Voltage Monitor Input

6VDRV

Drive Output

7VSNS

Charge Current Sense Input

8VIN

Battery Management

Input Supply

Unless otherwise specified, all limits apply for VIN = [VREG(typ)+1V], RSENSE = 500 mΩ, TA = -20°C to +85°C.

Typical values are at +25°C. Refer to Figure 1-1 for test circuit.

Parameter

Sym

Min

Typ

Max

Units

Conditions

Supply Voltage

VIN

4.5

—

5.5

Supply Current

IIN

—

0.7

265

560

µA

Shutdown, VSHDN = 0V

Constant Voltage Mode

Voltage Regulation (Constant Voltage Mode)

Regulated Output Voltage

VREG

4.059

4.158

4.1

4.2

4.141

4.242

MCP73828-4.1 only

MCP73828-4.2 only

Line Regulation

∆VBAT

-10

—

VIN = 4.5V to 5.5V,

IOUT = 75 mA

Load Regulation

∆VBAT

-1

+0.2

IOUT=10 mA to 75 mA

Output Reverse Leakage Current

ILK

—10

—

µA

VIN=Floating, VBAT=VREG

External MOSFET Gate Drive

Gate Drive Current

IDRV

—

0.08

—

Sink, CV Mode

Source, CV Mode

Gate Drive Minimum Voltage

VDRV

—1.6

—

Current Regulation (Controlled Current Mode)

Current Sense Gain

ACS

—100

—

∆(VSNS-VDRV) / ∆VBAT

Current Limit Threshold

VCS

(VIN-VSNS) at IOUT

Foldback Current Scale Factor

—

0.43

—

A/A

Charge Complete Indicator - CD10

Current Threshold

ITH

—10

—

%IOUT(PEAK)

Low Output Voltage

VOL

——

400

ISINK = 10 mA

Leakage Current

ILK

——

µA

ISINK=0 mA, VCD10=5.5V

Shutdown Input - SHDN

Input High Voltage Level

VIH

—

%VIN

Input Low Voltage Level

VIL

——

%VIN

Input Leakage Current

ILK

——

µA

VSHDN = 0V to 5.5V

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