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LP6283 Datasheet(PDF) 8 Page - Lowpower Semiconductor inc |
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LP6283 Datasheet(HTML) 8 Page - Lowpower Semiconductor inc |
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8 / 10 page ![]() LP6283–00 Version 0.0 Jul.-2016 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 8 of 10 Preliminary Datasheet LP6283 Current-Sense Transresistance RCS 0.3 V/A Soft-Start Ramp Time TSS2 3 ms FB2 UVP Trip Level VUVP2 Falling edge 1 V Duration to Trigger UVP Condition TUVP2 50 ms FB2 SCP Trip Level VSCP2 Falling edge 0.5 V Positive Charge-Pump Regulator FBP Reference Voltage VFBP 1.225 1.25 1.275 V FBP Line Regulation Error VIN = 10.8V to 13.2V 6 mV/V DRVP P-MOSFET On-Resistance RDS(ON) 2 Ω DRVP N-MOSFET On-Resistance RDS(ON) 1 Ω Soft-Start Ramp Time TSSP 3 ms FBP UVP Trip Level VUVPP Falling edge 1 V Duration to Trigger Fault Condition TUVPP 50 ms FBP Short-Circuit Level VSCPP Falling edge 0.5 V Negative Charge-Pump Regulator FBN Regulation Voltage VFBN 0.21 0.25 0.29 V Final FBN Regulation Voltage VREF − VFBN 0.98 1 1.02 V FBN Line Regulation Error VIN = 10.8V to 13.2V 6 mV/V DRVN P-MOSFET On-Resistance RDS(ON) 6 Ω DRVN N-MOSFET On-Resistance RDS(ON) 2 Ω Soft-Start Ramp Time TSSN 3 ms FBN UVP Trip Level VUVPN VREF - VFBN 0.4 V Duration to Trigger Fault Condition TUVPN 50 ms FBN Short Circuit Protection Level VSCPN VREF - VFBN 0.8 V Sequence Control EN Input Low Voltage VENL 0.6 V EN Input High Voltage VENH 1.5 5.5 V DLY Capacitor Charge Current IDLY 8 μA VDL Turn-On Threshold 1.25 V GD Output Sink Current EN = High, VGD_I = VIN 10 μA GD On-Voltage EN = High, VGD_I = VIN VIN −5 V Gate Pulse Modulator (GPM) GVOFF Input Low Voltage 0.6 V GVOFF Input High Voltage 1.5 5.5 V GVOFF Input Leakage Current −1 1 μA GVOFF-to-VGHM Rising Propagation Delay 1 kΩ from DRN to GND, 1.5nF from VGHM to GND 100 ns GVOFF-to-VGHM Falling Propagation Delay 1 kΩ from DRN to GND, 1.5nF from VGHM to GND 250 ns VGH Input Current VDLY = GVOFF = 3V 50 uA |
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