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UT7Q512 Datasheet(PDF) 6 Page - Aeroflex Circuit Technology |
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UT7Q512 Datasheet(HTML) 6 Page - Aeroflex Circuit Technology |
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6 / 16 page ![]() 6 AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)* (VDD = 5.0V±10%) (-55°C to +125°C) Notes: * Post-radiation performance guaranteed at 25 °C per MIL-STD-883 Method 1019. 1. Functional test. 2. Three-state is defined as a 500mV change from steady-state output voltage (see Figure 3). 3. The ET (enable true) notation refers to the falling edge of E. SEU immunity does not affect the read parameters. 4. The EF (enable false) notation refers to the rising edge ofE. SEU immunity does not affect the read parameters. SYMBOL PARAMETER MIN MAX UNIT tAVAV 1 Read cycle time 100 ns t AVQV Read access time 100 ns tAXQX 2 Output hold time 10 ns tGLQX 2 G-controlled Output Enable time 5 ns tGLQV G-controlled Output Enable time (Read Cycle 3) 50 ns tGHQZ 2 G-controlled output three-state time 30 ns tETQX 2,3 E-controlled Output Enable time 10 ns t ETQV 3 E-controlled access time 100 ns tEFQZ 1,2,4 E-controlled output three-state time 30 ns { { } } VLOAD + 500mV VLOAD - 500mV VLOAD VH - 500mV VL + 500mV Active to High Z Levels High Z to Active Levels Figure 3. 5-Volt SRAM Loading |
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