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UT7Q512 Datasheet(PDF) 6 Page - Aeroflex Circuit Technology

Part # UT7Q512
Description  512K x 8 SRAM
PDF  16 Pages
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Manufacturer  AEROFLEX [Aeroflex Circuit Technology]
Direct Link  http://www.aeroflex.com
Logo AEROFLEX - Aeroflex Circuit Technology

UT7Q512 Datasheet(HTML) 6 Page - Aeroflex Circuit Technology

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AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*
(VDD = 5.0V±10%) (-55°C to +125°C)
Notes: * Post-radiation performance guaranteed at 25
°C per MIL-STD-883 Method 1019.
1. Functional test.
2. Three-state is defined as a 500mV change from steady-state output voltage (see Figure 3).
3. The ET (enable true) notation refers to the falling edge of E. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the rising edge ofE. SEU immunity does not affect the read parameters.
SYMBOL
PARAMETER
MIN
MAX
UNIT
tAVAV
1
Read cycle time
100
ns
t
AVQV
Read access time
100
ns
tAXQX
2
Output hold time
10
ns
tGLQX
2
G-controlled Output Enable time
5
ns
tGLQV
G-controlled Output Enable time (Read Cycle 3)
50
ns
tGHQZ
2
G-controlled output three-state time
30
ns
tETQX
2,3
E-controlled Output Enable time
10
ns
t
ETQV
3
E-controlled access time
100
ns
tEFQZ
1,2,4
E-controlled output three-state time
30
ns
{
{
}
}
VLOAD + 500mV
VLOAD - 500mV
VLOAD
VH - 500mV
VL + 500mV
Active to High Z Levels
High Z to Active Levels
Figure 3. 5-Volt SRAM Loading



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