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HABC856 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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HABC856 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 5 page  ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 5 HABC856/HABC857/HABC858(PNP) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : BC856/BC857/BC858 FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage HABC846 VCBO -80 V HABC847 VCBO -50 HABC848 VCBO -30 Collector-Emitter Voltage HABC846 VCEO -65 V HABC847 VCEO -45 HABC848 VCEO -30 Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.1 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C SOT-23 1: BASE 2: EMITTER 3: COLLECTOR MARKING: HABC856A 3A HABC856B 3B HABC857A 3E HABC857B 3F HABC857C 3G HABC858A 3J HABC858B 3K HACB858C 3L |
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