HABC856 datasheet(2/5 Pages) HOTTECH

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HABC856/HABC857/HABC858(PNP)

GENERAL PURPOSE TRANSISTOR

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Parameter

Symbol

Test conditions

Min

Max

Unit

HABC856

Collector-Base Breakdown Voltage

HABC857

HABC858

VCBO

IC= -10µA,IE=0

-80

-50

-30

HABC856

Collector-Emitter Breakdown Voltage

HABC857

HABC858

VCEO

IC= -10mA,IB=0

-65

-45

-30

Emitter-Base Breakdown Voltage

VEBO

IE= -10µA,IC=0

-5

HABC856

Collector Cut-off Current

HABC857

HABC858

ICBO

VCB=- 70V , IE=0

VCB=- 45V , IE=0

VCB=- 25V , IE=0

-0.1

μA

HABC856

Collector Cut-off Current

HABC857

HABC858

ICEO

VCE=-60V , IB=0

VCE=-40V , IB=0

VCE=-25V , IB=0

-0.1

μA

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-0.1

μA

HABC856A,857A,858A

DC Current Gain

HABC856B,857B,858B

HABC857C,BC858C

hFE

VCE= -5V, IC= -2mA

110

200

420

220

450

800

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-100mA,IB= -5mA

-0.5

Base-Emitter Saturation Voltage

VBE(sat)

IC=-100mA,IB=- 5mA

-1.1

Transition Frequency

VCE=- 5V,IC= -10mA

f=100MHz

100

MHz

Collector Output Capacitance

Cob

VCB=-10V, f=1MHz

4.5

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