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LTM4615 Datasheet(PDF) 16 Page - Linear Technology |
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LTM4615 Datasheet(HTML) 16 Page - Linear Technology |
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16 / 32 page ![]() LTM4639 16 4639f For more information www.linear.com/LTM4639 Temperature Monitoring Measuring the absolute temperature of a diode is possible due to the relationship between current, voltage and temperature described by the classic diode equation: ID =IS • e VD η • VT or VD = η• VT •ln ID IS where ID is the diode current, VD is the diode voltage, η is the ideality factor (typically close to 1.0) and IS (saturation current) is a process dependent parameter. VT can be broken out to: VT = k • T q where T is the diode junction temperature in Kelvin, q is the electron charge and k is Boltzmann’s constant. VT is approximately 26mV at room temperature (298K) and scales linearly with Kelvin temperature. It is this linear temperature relationship that makes diodes suitable APPLICATIONS INFORMATION temperature sensors. The IS term in the equation above is the extrapolated current through a diode junction when the diode has zero volts across the terminals. The IS term varies from process to process, varies with temperature, and by definition must always be less than ID. Combining all of the constants into one term: KD = η • k q whereKD=8.62−5,andknowingln(ID/IS)isalwayspositive because ID is always greater than IS, leaves us with the equation that: VD = T(KELVIN)•KD •ln ID IS where VD appears to increase with temperature. It is common knowledge that a silicon diode biased with a current source has an approximate –2mV/°C temperature relationship (Figure 6), which is at odds with the equation. Infact,theIStermincreaseswithtemperature,reducingthe ln(ID/IS) absolute value yielding an approximate –2mV/°C composite diode voltage slope. Figure 6. Diode Voltage VD vs Temperature T(°C) for Different Bias Currents 4639 F06 TEMPERATURE (°C) –173 –73 27 127 0.4 0.6 0.8 1.0 ∆VD ID = 100µA ID = 10µA |
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