SDM1100LP

Document number: DS38515 Rev. 2 - 2

2 of 5

www.diodes.com

April 2016

© Diodes Incorporated

SDM1100LP

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V

Average Rectified Output Current

1

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

40

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance Junction to Case (Note 5)

16

°C/W

Typical Thermal Resistance Junction to Ambient (Note 5)

65

°C/W

Operating Temperature Range

-55 to +175

°C

Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage

100

—

—

V

Forward Voltage (Note 6)

—

—

0.77

V

—

0.58

0.62

—

—

0.86

—

0.65

0.70

Leakage Current (Note 6)

—

—

0.1

µA

—

—

0.015

mA

—

—

0.35

µA

—

—

0.35

mA

Total Capacitance

—

40

—

pF

Notes:

5. Device mounted 1inch sq. copper pad, 2oz.

6. Short duration pulse test used to minimize self-heating effect.

0.0001

0.001

0.01

0.1

1

10

0

100 200 300 400 500 600 700 800 900 1000

I

,

I

N

S

T

A

N

T

A

N

E

O

U

S

F

O

R

W

A

R

D

C

U

R

R

E

N

T

(

A

)

F

Figure 1 Typical Forward Characteristics

V , INSTANTANEOUS FORWARD VOLTAGE (mV)

F

T = -55°C

A

T = 125°C

A

T = 150°C

A

T = 175°C

A

T = 85°C

A

T = 25°C

A

0.001

0.01

0.1

1

10

100

1000

0

20

40

60

80

100

Figure 2 Typical Reverse Characteristics

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 175°C

A

T = 85°C

A

T = -55°C

A