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NXP Semiconductors

BGS8M2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8M2

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 4 — 13 June 2018

COMPANY CONFIDENTIAL

7 / 15

12 Characteristics

series. Unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ Max Unit

between gain mode and bypass mode

f = 1843 MHz

-

-

-

deg

f = 1960 MHz

[1] -5.0

-

+5.0 deg

Δφ

phase variation

f = 2140 MHz

-

-

-

deg

Gain mode

supply current

3.6

5.6

7.6

mA

f = 1843 MHz

[1][2] 12.3 14.3 16.3 dB

f = 1960 MHz

[3] 12.0 14.0 16.0 dB

power gain

f = 2140 MHz

[1][3] 11.2 13.2 15.2 dB

f = 1843 MHz

[2] -

5.5

-

dB

f = 1960 MHz

[4] -

6.0

-

dB

input return loss

f = 2140 MHz

[3] -

7.0

-

dB

f = 1843 MHz

[2] -

11.0 -

dB

f = 1960 MHz

[4] -

11.0 -

dB

output return loss

f = 2140 MHz

[3] -

11.0 -

dB

f = 1843 MHz

[2] -

23.0 -

dB

f = 1960 MHz

[4] -

23.0 -

dB

ISL

isolation

f = 2140 MHz

[3] -

23.0 -

dB

f = 1843 MHz

[1][2][5] -

0.80 1.4

dB

f = 1960 MHz

[1][4][5] -

0.85 1.4

dB

NF

noise figure

f = 2140 MHz

[1][3][5] -

0.95 1.5

dB

f = 1843 MHz

[1][2] -12.0 -8.0 -

dBm

f = 1960 MHz

[1][3] -11.0 -7.0 -

dBm

input power at 1 dB gain

compression

f = 2140 MHz

[1][5] -10.0 -6.0 -

dBm

f = 1843 MHz

[1][2] -3.0

+2.0 -

dBm

f = 1960 MHz

[1][4] -2.5

+2.5 -

dBm

input third-order intercept point

f = 2140 MHz

[1] -2.0

+3.0 -

dBm

K

Rollett stability factor

1

-

-

-

turn-on time

-

-

1.7

µs

turn-off time

-

-

0.6

µs