DRAFT DRAFT DRAFT DRAFT DRAFT DRAFT

DRAFT DRAFT DRAFT DRAFT DRAFT

DRAFT DRAFT DRAFT DRAFT

DRAFT DRAFT DRAFT

DRAFT DRAFT

DRAFT

BGS8M2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

Rev. 4 — 13 June 2018

Product data sheet

COMPANY CONFIDENTIAL

1 General description

The BGS8M2 is, also known as the LTE3001M, a Low-Noise Amplifier (LNA) with bypass

switch for LTE receiver applications, available in a small plastic 6-pin extremely thin

leadless package. The BGS8M2 requires one external matching inductor.

The BGS8M2 delivers system-optimized gain for both primary and diversity applications

where sensitivity improvement is required. The high linearity of these low noise devices

ensures the required receive sensitivity independent of cellular transmit power level in

FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient,

the BGS8M2 can be switched off to operate in bypass mode at a 1 µA current, to lower

power consumption.

The BGS8M2 is optimized for 1805 MHz to 2200 MHz.

2 Features and benefits

• Operating frequency from 1805 MHz to 2200 MHz

• Noise figure = 0.85 dB

• Gain 14.4 dB

• High input 1 dB compression point of -3.5 dBm

• Bypass switch insertion loss of 2.2 dB

• Supply voltage 1.5 V to 3.1 V

• Self-shielding package concept

• Integrated supply decoupling capacitor

• Optimized performance at a supply current of 5.8 mA

• Power-down mode current consumption < 1 µA

• Integrated temperature stabilized bias for easy design

• Require only one input matching inductor

• Input and output DC decoupled

• ESD protection on all pins (HBM > 2 kV)

• Integrated matching for the output

• Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch:

SOT1232

• 180 GHz transit frequency - SiGe:C technology

• Moisture sensitivity level 1