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NXP Semiconductors

BGS8M2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8M2

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 4 — 13 June 2018

COMPANY CONFIDENTIAL

8 / 15

Symbol Parameter

Conditions

Min

Typ Max Unit

Bypass mode

supply current

-

-

1

µA

f = 1843 MHz

[1][2] -3.6

-2.1 -0.6 dB

f = 1960 MHz

[1][4] -4.0

-2.2 -0.7 dB

power gain

f = 2140 MHz

[1][3] -4.0

-2.5 -1.0 dB

f = 1843 MHz

[2] -

12.0 -

dB

f = 1960 MHz

[4] -

11.0 -

dB

input return loss

f = 2140 MHz

[3] -

10.0 -

dB

f = 1843 MHz

[2] -

10.0 -

dB

f = 1960 MHz

[4] -

9.5

-

dB

output return loss

f = 2140 MHz

[3] -

9.0

-

dB

[1]

Guaranteed by device design; not tested in production.

[2]

E-UTRA operating band 3 (1805 MHz to 1880 MHz).

[3]

E-UTRA operating band 1 (2110 MHz to 2170 MHz).

[4]

E-UTRA operating band 2 (1930 MHz to 1990 MHz).

[5]

PCB losses are subtracted.

series. Unless otherwise specified.

Symbol Parameter

Conditions

Min Typ Max Unit

between gain mode and bypass mode

f = 1843 MHz

-

-

-

deg

f = 1960 MHz

[1] -5.0 -

+5.0 deg

Δφ

phase variation

f = 2140 MHz

-

-

-

deg

Gain mode

supply current

3.8

5.8

7.8

mA

f = 1843 MHz

[1][2] 12.5 14.5 16.5 dB

f = 1960 MHz

[3] 12.4 14.4 16.4 dB

power gain

f = 2140 MHz

[1][4] 11.7 13.7 15.7 dB

f = 1843 MHz

[2] -

5.5

-

dB

f = 1960 MHz

[3] -

6.5

-

dB

input return loss

f = 2140 MHz

[4] -

7.5

-

dB

f = 1843 MHz

[2] -

12.0 -

dB

f = 1960 MHz

[3] -

12.0 -

dB

output return loss

f = 2140 MHz

[4] -

11.0 -

dB

f = 1843 MHz

[2] -

25.0 -

dB

f = 1960 MHz

[3] -

24.0 -

dB

ISL

isolation

f = 2140 MHz

[4] -

23.0 -

dB