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MMBT7002K Datasheet(PDF) 2 Page - Diotec Semiconductor |
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MMBT7002K Datasheet(HTML) 2 Page - Diotec Semiconductor |
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2 / 3 page ![]() MMBT7002K Characteristics Kennwerte Tj = 25°C Min. Typ. Max. Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 10 µA BVDSS 60 V – – Drain-Source leakage current – Drain-Source Leckstrom VDS = 60 V, VGS = 0 V IDSS – – 1 µA Gate-Source leakage current – Gate-Source Leckstrom VGS = 20 V ±IGSS – – 10 µA Gate-Threshold voltage – Gate-Source Schwellspannung VGS = VDS, ID = 250 µA VGS(th) 1 V – 2.5 V Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 200 mA RDS(on) – – 3 Ω 4 Ω Forward Transconductance – Übertragungssteilheit VDS ≥ 10 VDS(on), ID = 200 mA gFS 80 mS – – Input Capacitance – Eingangskapazität VDS = 25 V, f = 1 MHz Ciss – 50 pF – Output Capacitance – Ausgangskapazität VDS = 25 V, f = 1 MHz Coss – 25 pF – Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 25 V, f = 1 MHz Crss – 5 pF – Turn-On Time – Einschaltzeit VDD= 30 V, RL= 150 Ω, ID= 0.2 A, VGS= 10 V, RG= 25 Ω ton – 20 ns – Turn-Off Delay Time – Ausschaltverzögerung VDD= 30 V, RL= 150 Ω, ID= 0.2 A, VGS= 10 V, RG= 25 Ω toff – 20 ns – Typical thermal resistance junction to ambient Typischer Wärmewiderstand Sperrschicht – Umgebung RthA 357 K/W 1) 2 1 Mounted on P.C. board with 3 mm2 copper pad per terminal – Montage auf Leiterplatte mit 3 mm2 Lötpad je Anschluss 2 Tested with pulses tp = 10 µs, duty cycle ≤ 1% – Gemessen mit Impulsen tp = 10 µs, Schaltverhältnis ≤ 1% 2 http://www.diotec.com/ © Diotec Semiconductor AG Typical output characteristics )2 Typische Ausgangskennlinien2) 1.5 1.25 1.0 0.75 0.5 0.25 0 I D [A] [V] V DS 6 4 2 0 V = 10V GS V = 7V GS V = 5V GS V = 4V GS V = 3V GS 10 1 10 -1 10-2 10-3 [A] I D Typical transfer characteristics )2 Typische Übertragungskennlinien 2) 1.5 V GS 2.5 3.0 3.5 4.0 [V] 5.0 T = 125°C j T = -2 5°C j T = 25°C j T = 75°C j V = 10V DS |
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