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MMBT7002K Datasheet(PDF) 2 Page - Diotec Semiconductor

Part # MMBT7002K
Description  N-Channel Enhancement Mode FET
PDF  3 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

MMBT7002K Datasheet(HTML) 2 Page - Diotec Semiconductor

  MMBT7002K Datasheet HTML 1Page - Diotec Semiconductor MMBT7002K Datasheet HTML 2Page - Diotec Semiconductor MMBT7002K Datasheet HTML 3Page - Diotec Semiconductor  
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MMBT7002K
Characteristics
Kennwerte
Tj = 25°C
Min.
Typ.
Max.
Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung
ID = 10 µA
BVDSS
60 V
–
–
Drain-Source leakage current – Drain-Source Leckstrom
VDS = 60 V, VGS = 0 V
IDSS
–
–
1 µA
Gate-Source leakage current – Gate-Source Leckstrom
VGS = 20 V
±IGSS
–
–
10 µA
Gate-Threshold voltage – Gate-Source Schwellspannung
VGS = VDS, ID = 250 µA
VGS(th)
1 V
–
2.5 V
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 200 mA
RDS(on)
–
–
3 Ω
4 Ω
Forward Transconductance – Übertragungssteilheit
VDS ≥ 10 VDS(on), ID = 200 mA
gFS
80 mS
–
–
Input Capacitance – Eingangskapazität
VDS = 25 V, f = 1 MHz
Ciss
–
50 pF
–
Output Capacitance – Ausgangskapazität
VDS = 25 V, f = 1 MHz
Coss
–
25 pF
–
Reverse Transfer Capacitance – Rückwirkungskapazität
VDS = 25 V, f = 1 MHz
Crss
–
5 pF
–
Turn-On Time – Einschaltzeit
VDD= 30 V, RL= 150 Ω, ID= 0.2 A, VGS= 10 V, RG= 25 Ω
ton
–
20 ns
–
Turn-Off Delay Time – Ausschaltverzögerung
VDD= 30 V, RL= 150 Ω, ID= 0.2 A, VGS= 10 V, RG= 25 Ω
toff
–
20 ns
–
Typical thermal resistance junction to ambient
Typischer Wärmewiderstand Sperrschicht – Umgebung
RthA
357 K/W 1)
2
1
Mounted on P.C. board with 3 mm2 copper pad per terminal – Montage auf Leiterplatte mit 3 mm2 Lötpad je Anschluss
2
Tested with pulses tp = 10 µs, duty cycle ≤ 1% – Gemessen mit Impulsen tp = 10 µs, Schaltverhältnis ≤ 1%
2
http://www.diotec.com/
© Diotec Semiconductor AG
Typical output characteristics )2
Typische Ausgangskennlinien2)
1.5
1.25
1.0
0.75
0.5
0.25
0
I
D
[A]
[V]
V
DS
6
4
2
0
V = 10V
GS
V = 7V
GS
V = 5V
GS
V = 4V
GS
V = 3V
GS
10
1
10
-1
10-2
10-3
[A]
I
D
Typical transfer characteristics )2
Typische Übertragungskennlinien
2)
1.5
V
GS
2.5
3.0
3.5
4.0
[V] 5.0
T = 125°C
j
T = -2 5°C
j
T = 25°C
j
T = 75°C
j
V = 10V
DS



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