LPB3443LT3G datasheet(2/5 Pages) LRC

2 / 5 page

20V P-Channel Enhancement-Mode MOSFET

6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

OFF CHARACTERISTICS

Characteristic

Drain–Source Breakdown Voltage

(VGS = 0, ID = -250μAdc)

Zero Gate Voltage Drain Current

(VGS = 0, VDS = -20 Vdc)

Gate–Body Leakage Current, Forward

(VGS = 12 Vdc)

Gate–Body Leakage Current, Reverse

(VGS = - 12 Vdc)

ON CHARACTERISTICS (Note 3)

Forward Transconductance

(VDS = -10Vdc, ID = -4.7Adc)

Gate Threshold Voltage

(VDS = VGS, ID = -250μAdc)

Static Drain–Source On–State Resistance

(VGS = -4.5Vdc, ID = -4.7Adc)

(VGS = -2.7Vdc, ID = -3.8Adc)

(VGS = -2.5Vdc, ID = -1.0Adc)

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward Voltage

(VGS = 0 Vdc, ISD = -1.7 Adc)

3.Pulse Test: Pulse Width ≤

300 μs, Duty Cycle ≤2.0%.

Symbol

Min.

-100

-20

μAdc

nAdc

RDS(on)

-0.6

110

-0.85

VSD

(VDD = -10V, RD=10Ω

ID = -1A, VGS = -4.5V,

RG = 6Ω)

mΩ

Typ.

Max.

IGSSR

IGSSF

100

VBRDSS

-1.4

-1.2

Unit

Vdc

td(on)

VGS(th)

IDSS

-1

Vdc

td(off)

gfs

Leshan Radio Company, LTD.

2/5

LPB 3443LT1G, S-LPB 3443LT1G

Rev.B Nov 2018

LPB3443LT3G Datasheet(PDF) 2 Page - Leshan Radio Company

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