1. FEATURES

●

VDS = -20V

●

RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ

●

RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ

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We declare that the material of product compliance with

RoHS requirements and Halogen Free.

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S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

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ESD rating of class 0 (<100V)per Human Body Model

2. APPLICATIONS

●

Advanced trench process technology

●

High density cell design for ultra low on-resistance.

3. DEVICE MARKING AND ORDERING INFORMATION

4. MAXIMUM RATINGS(Ta = 25ºC)

– Continuous TA = 25°C

– Pulsed (Note 1)

5. THERMAL CHARACTERISTICS

Power Dissipation

Thermal Resistance,

Junction–to–Ambient(Note 2)

Junction and Storage temperature

1.Repetitive Rating: Pulse width limited by the maximum junction temperature.

2.1-in²2oz Cu PCB board.

Device

Gate–to–Source Voltage – Continuous

VGS

±12

LPB 3443LT1G

S-LPB 3443LT1G

20V P-Channel Enhancement-Mode MOSFET

-20

Unit

Drain–Source Voltage

VDSS

Marking

Shipping

LPB3443LT1G

P34

3000/Tape&Reel

Drain Current

V

V

A

Unit

1.1

ID

-4.7

IDM

-20

LPB3443LT3G

P34

10000/Tape&Reel

Parameter

Symbol

Limits

Parameter

Symbol

Limits

W

PD

−55

∼+150

TJ,Tstg

RΘJA

110

ºC/W

ºC

SOT23LC

Leshan Radio Company, LTD.

Rev.B Nov 2018

1/5

1

2

3