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LPB3443LT3G Datasheet(PDF) 3 Page - Leshan Radio Company |
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LPB3443LT3G Datasheet(HTML) 3 Page - Leshan Radio Company |
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3 / 5 page ![]() 20V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES Leshan Radio Company, LTD. 3/5 LPB 3443LT1G, S-LPB 3443LT1G 0.02 0.03 0.04 0.05 0.06 0.07 0.08 1 2 3 4 5 6 ID,Drain Current(A) VGS=-2.5V VGS=-4.5V VGS=-2.7V 0.005 0.05 0.5 5 0.2 0.4 0.6 0.8 1 1.2 VSD Diode Forward Voltage(V) 150 ℃ -55 ℃ 25 ℃ 0 1 2 3 4 5 6 0 0.5 1 1.5 2 VGS,Gate To Source Voltage(V) VDS=-6.0V 150 ℃ -55 ℃ 25 ℃ 0 1 2 3 4 5 6 0 1 2 3 4 5 VDS,Drain to Source Voltage(V) Ta=25 ℃ VGS=-1.4 V VGS=-1.5V VGS=-1.6V VGS=-1.7 V VGS=-1.8V VGS=-1.9V,-2V,-3V,-4V ID vs. VDS ID vs. VGS IS vs. VSD RDS(on) vs. ID Rev.B Nov 2018 |
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