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M29W008ET Datasheet(PDF) 1 Page - STMicroelectronics |
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M29W008ET Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 43 page  Rev 0.1 June 2005 1/43 1 M29W008ET M29W008EB 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ ACCESS TIMES: 70ns, 90ns ■ PROGRAMMING TIME: 10µs per Byte typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Embedded Byte Program Algorithm – Status Register bits and Ready/Busy Output ■ 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom location) – 2 Parameter and 16 Main Blocks ■ BLOCK, MULTI-BLOCK and CHIP ERASE ■ MULTIPLE BLOCK PROTECTION/ TEMPORARY UNPROTECTION MODE ■ ERASE SUSPEND and RESUME MODES ■ LOW POWER CONSUMPTION – Standby and Automatic Standby modes ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK ■ 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – M29W008ET Device Code: D2h – M29W008EB Device Code: DCh ■ ECOPACK® TSOP40 PACKAGE Figure 1. Package TSOP40 (N) 10 x 20mm www.st.com |
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