FS8820P datasheet(7/13 Pages) FORTUNE

7 / 13 page

FS8820P

Rev. 1.8

7/13

10. Electrical Characteristics

(Ta=25°C unless otherwise specified)

PARAMETER

TEST CONDITIONS SYMBOL

Min

Typ

Max

UNIT

Supply Current

VCC=3.9V

ICC

2.5

5.2

Overdischarge Current

VCC=2.0V

IOD

1.8

4.5

Overcharge Protection Voltage

FS8820P

VOCP

4.255

4.280

4.305

Overcharge Release Voltage

VOCR

4.030

4.080

4.130

Overdischarge Protection Voltage

VODP

2.300

2.400

2.500

Overdischarge Release Voltage

VODR

2.400

2.500

2.600

Overcurrent Protection Voltage

VOIP

（

VOI1）

0.135

0.150

0.165

Short Current Protection Voltage

VCC=3.6V

VSIP

（

VOI2）

0.60

0.70

0.80

Charger over current detection

voltage

VDD=3.6V

VCOIP

-0.120

-0.100

-0.080

Faulty charger detect voltage

Vdet

6.0

8.0

10.0

Faulty charger recovery voltage

Vrec

5.8

7.3

8.8

0V charging prohibit

VST

0.65

0.95

1.25

Overcharge Delay Time

TOC

130

200

280

Overdischarge Delay Time

VCC=3.6V to 2.0V

TOD

100

140

Overcurrent Delay Time (1)

VCC=3.6V

TOI1

13.3

20.0

26.5

Overcurrent Delay Time (2)

VCC=3.6V

TOI2

0.60

1.0

1.80

Charge over current delay time

VCC=3.6V

Tdet

5.10

8.50

12.75

N-MOSFET have low turn-on resistance

Drain-Source Breakdown Voltage

(BATT- to D12 / D12 to GND)

VGS=0V,ID=250μA

BVDSS

Breakdown Voltage Temperature

Coefficient

Reference to 25℃,

ID=1mA

BVDSS/Δ

0.1

V/℃

Static Source-Source

On-Resistance (BATT- to GND)

VGS=3.7V,ID=1A

RSS(ON)

mΩ

Static Source-Source

On-Resistance (BATT- to GND)

VGS=2.7V,ID=1A

mΩ

Drain-Source Leakage Current)

(BATT- to D12 / D12 to GND)

VDS=16V,VGS=0V

IDSS

(Tj=25℃)

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