SLF60R080SS datasheet(2/6 Pages) MAPLESMI

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Electrical Characteristics ( TC = 25 °C unless otherwise noted )

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V,ID = 250uA, TJ=25℃

600

VGS = 0V,ID = 250uA, TJ=150℃

650

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

coefficient

ID = 250uA, referenced to 25°C

0.6

V/°C

IDSS

Drain-Source Leakage Current

VDS =600V, VGS = 0V

VDS =480V, TC = 125 °C

IGSS

Gate-Source Leakage, Forward

VGS = 20V, VDS = 0V

100

Gate-source Leakage, Reverse

VGS = -20V, VDS = 0V

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250uA

2.0

3.0

4.0

RDS(ON)

Static Drain-Source On-state

Resistance

VGS =10 V, ID = 23.5A

mΩ

Dynamic Characteristics

Ciss

Input Capacitance

VGS =0 V, VDS =25V, f = 1MHz

3100

Coss

Output Capacitance

2399

Crss

Reverse Transfer Capacitance

Dynamic Characteristics

td(on)

Turn-on Delay Time

VDD =300V, ID =25A, RG =25

Ω

Rise Time

120

td(off)

Turn-off Delay Time

137

Fall Time

116

Total Gate Charge

VDS =480V, VGS =10V, ID =25A

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge(Miller Charge)

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit.

Maximum Continuous Drain-Source Diode Forward Current

ISM

Maximum Pulsed Drain-Source Diode Forward Current

140

VSD

Diode Forward Voltage

IS =25A, VGS =0V

1.5

trr

Reverse Recovery Time

IS =25A, VGS=0V, dIF/dt=100A/us

450

Qrr

Reverse Recovery Charge

1.4

NOTES

1. Repeativity rating : pulse width limited by junction temperature

2. L =10mH, IAS =12A, VDD = 50V, RG = 25

Ω, Starting TJ = 25°C

3. ISD

≤ ID, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse Width

≤ 300us, Duty Cycle ≤ 2%

5. Essentially independent of operating temperature.

Maple Semiconductor CO.,LTD

http://www.maplesemi.com

Rev 1.0 September 2017

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SLF60R080SS Datasheet(PDF) 2 Page - Shenzhen Meipusen Semiconductor Co., Ltd

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