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EMB70N08CS Datasheet(PDF) 5 Page - Excelliance MOS Corp.

Part # EMB70N08CS
Description  N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Manufacturer  EXCELLIANCE [Excelliance MOS Corp.]
Direct Link  http://www.excelliancemos.com/
Logo EXCELLIANCE - Excelliance MOS Corp.

EMB70N08CS Datasheet(HTML) 5 Page - Excelliance MOS Corp.

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2012/7/18 
p.5 
EMB70N08CS
Q   ‐ Gate Charge( nC )
0
0
2
4
g
3
6
9
I   = 15A
6
8
10
D
12
15
21
18
40V
V   = 20V
DS
Gate Charge Characteristics
V   ‐ Drain‐Source Voltage( V )
600
0
0
300
DS
10
Crss
Coss
900
1500
Ciss
20
30
40
GS
f  =  1MHz
V    = 0 V
Capacitance Characteristics
50
60
150
450
750
1350
1200
1050
Single Pulse Time( sec ) 
Single Pulse Maximum Power Dissipation
0.01
0
1000
500
0.1
1
2500
1500
2000
3000
10
100
1000
R    = 3.2 C/W
Single Pulse
C
°
T  = 25 C
θJC
°
DC
V     ‐  Dr a i n ‐ So u r c e  Vo lt a g e (  V  )
  V    =  10V
Sin g le  Puls e
R    =  3.2 ° C / W
  T    =  25° C
DS
 JC
C
GS
R 
    
    
Lim
it
D S
(O
N)
10
10 0
1
0. 0 1
0. 1
1
10
10 0
10
0m
S
10
m
S
1m
S
10
0u
S
Ma x im u m  Sa f e  Op e r a t in g  Ar e a
10 00
10
uS
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
single pulse
D=0.5
0.2
0.1
0.05
0.02
0.01
t2
t1
PDM
※Note :
  1. RθJC(t)=3.2°C/W Max.
  2. Duty Cycle, D=t1/ t2
  3. TJM ‐ TC=PDM*RθJC(t)
Transient Thermal Response Curve
t1,Time( sec )
10
‐2
10
0
‐1
10
10
1
0
10
10
‐1
‐2
10
10
‐3
‐4
10
10
‐5



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