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M50FLW080A Datasheet(PDF) 25 Page - STMicroelectronics |
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M50FLW080A Datasheet(HTML) 25 Page - STMicroelectronics |
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25 / 64 page ![]() M50FLW080A, M50FLW080B Command interface 25/64 4 Command interface All Bus Write operations to the device are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. An internal Program/Erase Controller handles all timings, and verifies the correct execution of the Program and Erase commands. The Program/Erase Controller provides a Status Register whose output may be read at any time to monitor the progress or the result of the operation. The Command Interface reverts to the Read mode when power is first applied, or when exiting from Reset. Command sequences must be followed exactly. Any invalid combination of commands will be ignored. See Table 11 for the available Command Codes. The following commands are the basic commands used to read from, write to, and configure the device. The following text descriptions should be read in conjunction with Table 13. 4.1 Read Memory Array command The Read Memory Array command returns the device to its Read mode, where it behaves like a ROM or EPROM. One Bus Write cycle is required to issue the Read Memory Array command and return the device to Read mode. Once the command is issued, the device remains in Read mode until another command is issued. From Read mode, Bus Read operations access the memory array. If the Program/Erase Controller is executing a Program or Erase operation, the device will not accept any Read Memory Array commands until the operation has completed. For a multibyte read, in the FWH mode, the address, that was transmitted with the command, will be automatically aligned, according to the MSIZE granularity. For example, if MSIZE=7, regardless of any values that are provided for A6-A0, the first output will be from the location for which A6-A0 are all ‘0’s. Table 11. Command codes Hexa-decimal Command 10h Alternative Program Setup, Double/Quadruple Byte Program Setup, Chip Erase Confirm 20h Block Erase Setup 32h Sector Erase Setup 40h Program, Double/Quadruple Byte Program Setup 50h Clear Status Register 70h Read Status Register 80h Chip Erase Setup 90h Read Electronic Signature B0h Program/Erase Suspend D0h Program/Erase Resume, Block Erase Confirm, Sector Erase Confirm FFh Read Memory Array |
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