GD25VE32CSIS datasheet(4/63 Pages) GIGADEVICE

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Uniform Sector

Dual and Quad Serial Flash

GD25VE32C

1. FEATURES

◆ 32M-bit Serial Flash

◆ Fast Program/Erase Speed

-4096K-byte

-Page Program time: 0.6ms typical

-256 bytes per programmable page

-Sector Erase time: 50ms typical

-Block Erase time: 0.15/0.25s typical

◆ Standard, Dual, Quad SPI

-Chip Erase time: 15s typical

-Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#

-Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#

◆ Flexible Architecture

-Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3

-Uniform Sector of 4K-byte

-Uniform Block of 32/64K-byte

◆ High Speed Clock Frequency

-104MHz for fast read with 30PF load

◆ Low Power Consumption

-Dual I/O Data transfer up to 208Mbits/s

-20mA maximum active current

-Quad I/O Data transfer up to 416Mbits/s

-4uA maximum power down current

◆ Software/Hardware Write Protection

◆ Advanced Security Features(1)

-Write protect all/portion of memory via software

-3*1024-Byte Security Registers With OTP Locks

-Enable/Disable protection with WP# Pin

-Discoverable parameters (SFDP) register

-Top/Bottom Block protection

◆ Single Power Supply Voltage

◆

Minimum 100,000 Program/Erase Cycles

-Full voltage range: 2.1~3.6V

◆ Data Retention

◆ Package Information

-20-year data retention typical

-SOP8 (208mil)

-SOP8 (150mil)

◆ Allows XIP (execute in place) Operation

-VSOP8 (208mil)

-Continuous Read With 8/16/32/64-byte Wrap

-DIP8 (300mil)

-WSON8 (6*5mm)

-USON8 (3*3mm)

-USON8 (3*4mm)

-TFBGA24 (6*4 ball array)

-TFBGA24 (5*5 ball array)

Note: 1.Please contact GigaDevice for details.

GD25VE32CSIS Datasheet(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

GD25VE32CSIS Datasheet(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

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