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GD25VE32CSIS Datasheet(PDF) 48 Page - GigaDevice Semiconductor (Beijing) Inc.

Part # GD25VE32CSIS
Description  Uniform Sector Dual and Quad Serial Flash
PDF  63 Pages
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Manufacturer  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Direct Link  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25VE32CSIS Datasheet(HTML) 48 Page - GigaDevice Semiconductor (Beijing) Inc.

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Uniform Sector
Dual and Quad Serial Flash
GD25VE32C
48
8.5. DC CHARACTERISTICS
(T= -40
℃~85℃, VCC=2.1~3.6V)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit.
ILI
Input Leakage Current
±2
μA
ILO
Output Leakage Current
±2
μA
ICC1
Standby Current
CS#=VCC,
VIN=VCC or VSS
1
5
μA
ICC2
Deep Power-Down Current
CS#=VCC,
VIN=VCC or VSS
0.1
4
μA
ICC3
Operating Current (Read)
CLK=0.1VCC /
0.9VCC
at 104MHz,
Q=Open(*1,*2,*4 I/O)
15
20
mA
CLK=0.1VCC /
0.9VCC
at 80MHz,
Q=Open(*1,*2,*4 I/O)
13
18
mA
ICC4
Operating Current (PP)
CS#=VCC
20
mA
ICC5
Operating Current (WRSR)
CS#=VCC
20
mA
ICC6
Operating Current (SE)
CS#=VCC
20
mA
ICC7
Operating Current (BE)
CS#=VCC
20
mA
ICC8
Operating Current (CE)
CS#=VCC
20
mA
ICC9
High Performance Current
0.6
1.2
mA
VIL
Input Low Voltage
-0.5
0.2VCC
V
VIH
Input High Voltage
0.7VCC
VCC+0.4
V
VOL
Output Low Voltage
IOL =100
μA
0.2
V
VOH
Output High Voltage
IOH =-
100μA
VCC-0.2
V



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