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BUL44D2 Datasheet(PDF) 1 Page - ON Semiconductor

Part # BUL44D2
Description  POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS
PDF  12 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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1
Motorola Bipolar Power Transistor Device Data
Designer's™ Data Sheet
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network
The BUL44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (
±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
It’s characteristics make it also suitable for PFC application.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
VCEO
400
Vdc
Collector–Base Breakdown Voltage
VCBO
700
Vdc
Collector–Emitter Breakdown Voltage
VCES
700
Vdc
Emitter–Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
2
5
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
1
2
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25
°C
PD
50
0.4
Watt
W/
_C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
R
θJC
R
θJA
2.5
62.5
_C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
″ from case for 5 seconds
TL
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL44D2/D
© Motorola, Inc. 1995
BUL44D2
POWER TRANSISTORS
2 AMPERES
700 VOLTS
50 WATTS
CASE 221A–06
TO–220AB


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