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BUL44D2 Datasheet(PDF) 1 Page - ON Semiconductor |
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BUL44D2 Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 12 page ![]() 1 Motorola Bipolar Power Transistor Device Data Designer's™ Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUL44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread ( ±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread • Integrated Collector–Emitter Free Wheeling Diode • Fully Characterized and Guaranteed Dynamic VCE(sat) • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads It’s characteristics make it also suitable for PFC application. MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 400 Vdc Collector–Base Breakdown Voltage VCBO 700 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous — Peak (1) IC ICM 2 5 Adc Base Current — Continuous Base Current — Peak (1) IB IBM 1 2 Adc *Total Device Dissipation @ TC = 25_C *Derate above 25 °C PD 50 0.4 Watt W/ _C Operating and Storage Temperature TJ, Tstg – 65 to 150 _C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient R θJC R θJA 2.5 62.5 _C/W Maximum Lead Temperature for Soldering Purposes: 1/8 ″ from case for 5 seconds TL 260 _C (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL44D2/D © Motorola, Inc. 1995 BUL44D2 POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS CASE 221A–06 TO–220AB |
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