BUL44D2

3

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

Voltage:

Determined 1

µs and

3

µs respectively after

rising IB1 reaches

90% of final IB1

IC = 0.4 A

IB1 = 40 mA

VCC = 300 V

@ 1

µs

@ TC = 25°C

@ TC = 125°C

VCE(dsat)

3.3

6.8

V

Dynamic Saturation

Voltage:

Determined 1

µs and

3

µs respectively after

rising IB1 reaches

90% of final IB1

IB1 = 40 mA

VCC = 300 V

@ 3

µs

@ TC = 25°C

@ TC = 125°C

0.5

1.3

V

µs and

3

µs respectively after

rising IB1 reaches

90% of final IB1

IC = 1 A

IB1 = 0.2 A

VCC = 300 V

@ 1

µs

@ TC = 25°C

@ TC = 125°C

4.4

12.8

V

90% of final IB1

IB1 = 0.2 A

VCC = 300 V

@ 3

µs

@ TC = 25°C

@ TC = 125°C

0.5

1.8

V

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

fT

13

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

50

75

pF

Input Capacitance

(VEB = 8 Vdc)

Cib

240

500

pF

SWITCHING CHARACTERISTICS: Resistive Load (D.C.

≤ 10%, Pulse Width = 40 µs)

Turn–on Time

IC = 0.5 Adc, IB1 = 50 mAdc

IB2 = 250 mAdc

VCC = 300 Vdc

@ TC = 25°C

@ TC = 125°C

ton

450

600

600

ns

Turn–off Time

IB2 = 250 mAdc

VCC = 300 Vdc

@ TC = 25°C

@ TC = 125°C

toff

700

1300

1000

ns

Turn–on Time

IC = 1 Adc, IB1 = 0.2 Adc

IB2 = 0.5 Adc

VCC = 300 Vdc

@ TC = 25°C

@ TC = 125°C

ton

90

105

150

ns

Turn–off Time

IB2 = 0.5 Adc

VCC = 300 Vdc

@ TC = 25°C

@ TC = 125°C

toff

1.1

1.5

1.25

µs

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

Fall Time

IC = 0.4 Adc

IB1 = 40 mAdc

IB2 = 0.2 Adc

@ TC = 25°C

@ TC = 125°C

tf

110

105

150

ns

Storage Time

IC = 0.4 Adc

IB1 = 40 mAdc

IB2 = 0.2 Adc

@ TC = 25°C

@ TC = 125°C

ts

0.55

0.70

0.75

µs

Crossover Time

IB2 = 0.2 Adc

@ TC = 25°C

@ TC = 125°C

tc

85

80

150

ns

Fall Time

IC = 1 Adc

IB1 = 0.2 Adc

IB2 = 0.5 Adc

@ TC = 25°C

@ TC = 125°C

tf

100

90

150

ns

Storage Time

IC = 1 Adc

IB1 = 0.2 Adc

IB2 = 0.5 Adc

@ TC = 25°C

@ TC = 125°C

ts

1.05

1.45

1.5

µs

Crossover Time

IB2 = 0.5 Adc

@ TC = 25°C

@ TC = 125°C

tc

100

100

175

ns

Fall Time

IC = 0.8 Adc

IB1 = 160 mAdc

IB2 = 160 mAdc

@ TC = 25°C

@ TC = 125°C

tf

110

180

150

ns

Storage Time

IC = 0.8 Adc

IB1 = 160 mAdc

IB2 = 160 mAdc

@ TC = 25°C

@ TC = 125°C

ts

2.05

2.8

2.35

µs

Crossover Time

IB2 = 160 mAdc

@ TC = 25°C

@ TC = 125°C

tc

180

400

300

ns

Fall Time

IC = 0.4 Adc

IB1 = 40 mAdc

IB2 = 40 mAdc

@ TC = 25°C

@ TC = 125°C

tf

150

175

225

ns

Storage Time

IC = 0.4 Adc

IB1 = 40 mAdc

IB2 = 40 mAdc

@ TC = 25°C

@ TC = 125°C

ts

1.65

2.2

1.95

µs

Crossover Time

IB2 = 40 mAdc

@ TC = 25°C

@ TC = 125°C

tc

150

330

250

ns