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MS1329 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1329 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() 053-7067 Rev - 10-2002 MS1329 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS DESCRIPTION: DESCRIPTION: DESCRIPTION: DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold metalitzation provide optimum VSWR capability. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C) Symbol Parameter Value Unit VCBO Collector- Base Voltage 65.0 V VCEO Collector-Emitter Voltage 35.0 V VEBO Emitter-Base Voltage 4.0 V PDISS Power Dissipation 75.0 W IC Collector current 6.5 A TJ Junction Temperature +200 °°°°C TSTG Storage Temperature -65 to +150 °°°°C Thermal Data Thermal Data Thermal Data Thermal Data RTH(J-C) Thermal Resistance Junction-Case 2.3 °°°°C/W Features Features Features Features • 150 MHz • 28 VOLTS • POUT = 60W • GP = 7.0 dB MINIMUM • COMMON EMITTER CONFIGURATION |
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