ACTT10-800CT datasheet(3/13 Pages) WEEN

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WeEn Semiconductors

ACTT10-800CT

AC Thyristor Triac power switch

ACTT10-800CT

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Product data sheet

5 September 2018

3 / 13

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDRM

repetitive peak off-state

voltage

800

IT(RMS)

RMS on-state current

full sine wave; Tmb ≤ 125 °C; Fig. 1;

Fig. 2; Fig. 3

full sine wave; Tj(init) = 25 °C; tp = 20 ms;

Fig. 4; Fig. 5

ITSM

non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C; tp = 16.7 ms

I2t

I2t for fusing

tp = 10 ms; sine-wave pulse

A²s

dIT/dt

rate of rise of on-state

current

IG = 0.2 A

100

A/µs

IGM

peak gate current

t = 20 μs

PGM

peak gate power

PG(AV)

average gate power

over any 20 ms period

0.5

Tstg

storage temperature

-40

150

°C

junction temperature

150

°C

VPP

peak pulse voltage

Tj = 25 °C; non-repetitive, off-state; Fig. 6

Tmb (°C)

-50

150

100

aaa-013626

IT(RMS)

(A)

125 °C

Fig. 1. RMS on-state current as a function of mounting

base temperature; maximum values

aaa-013627

IT(RMS)

(A)

surge duration (s)

10-2

10-1

f = 50 Hz; Tmb = 125 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

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